Anomalous Stark Shifts in Single Vertically Coupled Pairs of InGaAs Quantum Dots

نویسنده

  • R. Oulton
چکیده

Vertically coupled Stranski Krastanow QDs are predicted to exhibit strong tunnelling interactions that lead to the formation of hybridised states. We report the results of investigations into single pairs of coupled QDs in the presence of an electric field that is able to bring individual carrier levels into resonance and to investigate the Stark shift properties of the excitons present. Pronounced changes in the Stark shift behaviour of exciton features are identified and attributed to the significant redistribution of the carrier wavefunctions as resonance between two QDs is achieved. At low electric fields coherent tunnelling between the two QD ground states is identified from the change in sign of the permanent dipole moment and dramatic increase of the electron polarisability, and at higher electric fields a distortion of the Stark shift is attributed to a coherent tunnelling effect between the ground state of the upper QD and the excited state of the lower QD. PACS: 71.35.Ji, 71.70.Ej, 71.70.Gm

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Coulomb-interaction driven anomaly in the Stark effect for an exciton in vertically coupled quantum dots

The effect of the electric field on an exciton confined in a pair of vertically coupled quantum dots is studied. We use a single-band approximation and a parabolic model potential. As a result of these idealizations, we obtain a numerically solvable model, which is used to describe the influence of the electron–hole interaction on the Stark effect for the lowestenergy photoluminescence lines. W...

متن کامل

Atomistic Modeling of an experimental GaAs / InGaAs Quantum Dot Molecule using NEMO 3 - D Yui - Hong

..............................................................................................1 1. NEMO 3-D............................................................................................2 2. INTRODUCTION TO QUANTUMDOTS......................................................7 3. QUANTUM CONFINED STARK EFFECT.....................................................9 3.1 QCSE in single quan...

متن کامل

Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)

Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...

متن کامل

Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)

Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...

متن کامل

Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots

Related Articles Long wavelength (>1.55μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals Appl. Phys. Lett. 102, 073103 (2013) Intraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 064310 (2013) Development of polaron-transformed explicitly correlated full configuration interactio...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004